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ISSUED DATE :2005/10/03 REVISED DATE :
GI1952
Description
PNP HIGH SPEED SWITCHING TRANSISTOR
The GI1952 is designed for high speed switching applications.
Features & saturation voltage, typically VCE(sat) =-0.2V at IC/IB=-3A/-0.15A Low
&High speed switching, typically tf =0.15 s at IC=-3A &Wide SOA & Complements to GI5103
Package Dimensions
TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Absolute Maximum Ratings (TA=25 : )
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Device Dissipation (TA=25 : ) Total Device Dissipation (TC=25 : ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PD PD TJ Tstg Ratings -100 -60 -5 -5 -10 1 10 150 -55 ~ +150 Unit V V V A A W W : :
Electrical Characteristics (TA = 25 : unless otherwise noted)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 fT Cob Min. -100 -60 -5 120 40 Typ. 80 130 Max. -10 -10 -0.3 -0.5 -1.2 -1.5 270 Unit V V V uA uA V V V V Test Conditions IC=-50uA, IE=0 IC=-1mA, IB=0 IE=-50uA, IC=0 VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-3A, IB=-0.15A IC=-4A, IB=-0.2A IC=-3A, IB=-0.15A IC=-4A, IB=-0.2A VCE=-2V, IC=-1A VCE=-2V, IC=-3A VCE=-10V, IE=0.5A, f=30MHz VCB=-10V, IE=0, f=1MHz
MHz pF
GI1952
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ISSUED DATE :2005/10/03 REVISED DATE :
ton (Turn-on Time) tstg (Storage Time) tf (Fall Time)
-
-
0.3 1.5 0.3
uS
IC=-3A , RL=10 IB1=-IB2=-0.15A VCC -30V
*Measure using pulse current
Characteristics Curve
GI1952
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ISSUED DATE :2005/10/03 REVISED DATE :
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GI1952
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